Silicon photonic chip wafer-level test system

System performance

Compatible with 4/6/8/10/12 inch wafer testing;

High temperature chuck configuration, with the ability to test temperatures between room temperature and 200 ℃ (low temperature requires nitrogen gas with a flow rate>480L/min, and a heating time of 26min from -40 ℃ to 150 ℃);

Wafer leveling function, chuck flatness<10um, visual height compensation;

Establish image recognition templates and wafer maps.

Testing capability

Single fiber vertical coupling, standard with 8 ° fiber optic clamp and an additional 6 ° adjustment bracket;

Adopting imported standard instruments, single-sided fiber coupling<3s, heater scanning time<2.5s, spectral scanning time<1.5s;

Repetitive standard deviation<0.3dB;

Open software settings with strong compatibility.

Advantages

Test efficiency

Fast coupling, unilateral time<3s One-click test Visual compensation for height difference

Reliability

Long mean time between failures (MTBF) Repetitive standard deviation<0.3dB

Cost performance

High-precision instrument Integrated testing Open configuration

Equipment parameters

Serial Number	Project	Description
1	Suitable for wafer size	4 / 6 / 8 / 10 / 12 Inch wafer
2	Presentation method	Manual loading, vacuum porous adsorption
3	Shock absorption platform	Air flotation shock absorption
4	Temperature control range	Room temperature~200℃
5	Chuck assembly	X / Y / Z / θ Electric 4-axis adjustment, Chuck flatness：±10μm
6	Visual system	X/Y/Z electric 3-axis adjustment, 0.6~7.2X continuously adjustable magnification, 200W pixel CMOS camera
7	Working environment	Cleanrooms of Class 1000 or above, 25 ℃± 5 ℃, relative humidity 40%~60%
8	Test project	O-O，O-E，E-O，E-E
9	Can be equipped with a probe holder	Fiber optic displacement table, FA displacement table, DC probe displacement table, RF probe displacement table
10	other	Support autofocus, automatic creation of Wafer Map, automatic X/Y/Z chuck position compensation, single fiber vertical coupling, dual fiber vertical coupling, FA fiber vertical coupling, FA angle calibration, FA height measurement, etc

Test project

Test Type	Test project	Light source output	Spectral scanning	DC power up	RF input	English	Symbol	Unit	Indicator Definition
O-O (Light light testing）	Insertion loss	√	√			Insert Loss	IL	dB	The power loss generated by light passing through a certain device
	Peak wavelength	√	√			Peak Wavelength	λp	nm	The wavelength with the highest radiation intensity in the spectrum
	Center wavelength	√	√			Central Wavelength	λc	nm	The wavelength corresponding to the midpoint of the maximum width of the rising and falling edges, where the maximum spectral intensity decreases by half
	Polarization related loss	√				Polarization Dependent Loss	PDL	dB	The maximum change in output optical power when the polarization state of an optical signal changes to its full polarization state.
O-E (Optoelectronic testing）	Half wave voltage	√	√	√		half-wave voltage@heater	Pπ	V	(Voltage corresponding to maximum power - Voltage corresponding to minimum power)/2
O-E (Optoelectronic testing）	Responsiveness (optional)	√	√	√		Responsivity	R	A/W	The ratio of photocurrent to incident light power
E-E (Electrical testing）	Resistance@Heater			√		Resistance	ΩH	ohm	Heater resistance at specified temperature
	Resistance@Traveling Wave electrode			√		Resistance	ΩT	ohm	Resistance value of traveling wave electrode at specified temperature
	Dark current (optional)			√		Dark current	Id	nA	The current output of a photodetector (MPD) due to the device itself when there is no light incident.
E-O-E (Electro optical electrical testing）	S-parameter testing	√		√	√	Scattering parameters	S11 S21 S12 S22	dB	Characterize the transmission and reflection behavior of optical signals in devices

Software Introduction

Silicon Optical Chip Wafer Level Testing System - Testing Process

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